preliminary solid state devices, inc. SFT5333 features: data sheet #: tr0002c maximum ratings symbol units value v ebo 6 volts emitter-base voltag e v cbo 100 volts collector-base voltag e i c 2 collector current collector-emitter voltag e v ceo 70 amps volts o c w mw/ o c o c/w ? radiation tolerant ? fast switching, 150ns max t(on) ? high frequency, ft 85mhz min. ? bvceo 70volts min. ? low saturation voltage. ? 200 o c operating, gold eutectic die attach. ? designed for complementary use with sft4300. to-5 2 amp 100 volts high speed pnp transistor operating and storage temperature t j, t stg -65 to +200 6.6 66 thermal resistance, junction to case r q q jc 15.2 total device dissipation @ t c =100 o c derate above 100 o c p d i b 1 base current amps electrical characteristics symbol units min max volts 70 - bv ceo collector-emitter breakdown voltage (i c = 30 ma dc ) volts 100 - collector-base breakdown voltage (i c = 200 m a dc ) volts 6 - bv ebo emitter-base breakdown voltage (i e = 200 m a dc ) m m a m m a - 1 75 i cbo collector cutoff current (v cb =90v dc, t c =25 o c) (v cb =90v dc, t c =100 o c) m m a - 5 i ceo collector cutoff current (v ce = 40 v dc ) bv cbo designer's data sheet 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release.
solid state devices, inc. SFT5333 preliminary 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 min max electrical characteristics symbol units m m a emitter cutoff current (v eb = 6v dc ) - i ebo 1 250 dc current gain * (i c = 1.0 a dc , v ce = 5 v dc ) (i c = 2.0 a dc , v ce = 5 v dc ) 40 40 0.45 1.0 collector-emitter saturation voltage * (i c = 1.0 a dc , i b =100 ma dc ) (i c = 2.0a dc , i b = 200 ma dc ) v ce (sat) volts h fe base-emitter voltage * (i c = 2.0 a dc , v ce = 4 v dc ) - 1.5 volts v be (on) current gain bandwidth product (i c =1.0 a dc , v ce =10 v dc, f =10mhz) 85 - mhz ft 75 pf output capacitance (v cb = 30v dc , i e = 0a dc, f =1.0mhz) - c ob 300 pf input capacitance (v be = 6v dc , i c = 0a dc, f =1.0mhz) - c ib ( v cc =20v dc , i c =1.0a dc , v eb(off ) =3.7v dc , i b1 =i b2 =100ma dc , r l =20 ohms) turn off time * pulse test: pulse width = 300 m m s, duty cycle = 2% t (on) 150 ns t (off) 450 ns turn on time pin 2: base pin 1: emitter - - - - case outline: to-5 pin 3: collector
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